Commit e3ed3649 authored by Bartlomiej Zolnierkiewicz's avatar Bartlomiej Zolnierkiewicz Committed by Eduardo Valentin
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thermal: exynos: remove parsing of samsung, tmu[_min, _max]_efuse_value properties 



Since pdata efuse values are SoC (not platform) specific just move
them from platform data to struct exynos_tmu_data instance. Then
remove parsing of samsung,tmu[_,min_,max]_efuse_value properties.

There should be no functional changes caused by this patch.

Signed-off-by: default avatarBartlomiej Zolnierkiewicz <b.zolnierkie@samsung.com>
Reviewed-by: default avatarDaniel Lezcano <daniel.lezcano@linaro.org>
Signed-off-by: default avatarEduardo Valentin <edubezval@gmail.com>
parent 09d29426

drivers/thermal/samsung/exynos_tmu.c

+32 −17
Original line number Diff line number Diff line
@@ -185,6 +185,9 @@ 
 * @clk: pointer to the clock structure.

 * @clk_sec: pointer to the clock structure for accessing the base_second.

 * @sclk: pointer to the clock structure for accessing the tmu special clk.

 * @efuse_value: SoC defined fuse value

 * @min_efuse_value: minimum valid trimming data

 * @max_efuse_value: maximum valid trimming data

 * @temp_error1: fused value of the first point trim.

 * @temp_error2: fused value of the second point trim.

 * @regulator: pointer to the TMU regulator structure.
@@ -207,6 +210,9 @@ struct exynos_tmu_data { 
	struct work_struct irq_work;

	struct mutex lock;

	struct clk *clk, *clk_sec, *sclk;

	u32 efuse_value;

	u32 min_efuse_value;

	u32 max_efuse_value;

	u16 temp_error1, temp_error2;

	struct regulator *regulator;

	struct thermal_zone_device *tzd;
@@ -283,20 +289,18 @@ static int code_to_temp(struct exynos_tmu_data *data, u16 temp_code) 


static void sanitize_temp_error(struct exynos_tmu_data *data, u32 trim_info)

{

	struct exynos_tmu_platform_data *pdata = data->pdata;



	data->temp_error1 = trim_info & EXYNOS_TMU_TEMP_MASK;

	data->temp_error2 = ((trim_info >> EXYNOS_TRIMINFO_85_SHIFT) &

				EXYNOS_TMU_TEMP_MASK);



	if (!data->temp_error1 ||

		(pdata->min_efuse_value > data->temp_error1) ||

		(data->temp_error1 > pdata->max_efuse_value))

		data->temp_error1 = pdata->efuse_value & EXYNOS_TMU_TEMP_MASK;

	    (data->min_efuse_value > data->temp_error1) ||

	    (data->temp_error1 > data->max_efuse_value))

		data->temp_error1 = data->efuse_value & EXYNOS_TMU_TEMP_MASK;



	if (!data->temp_error2)

		data->temp_error2 =

			(pdata->efuse_value >> EXYNOS_TRIMINFO_85_SHIFT) &

			(data->efuse_value >> EXYNOS_TRIMINFO_85_SHIFT) &

			EXYNOS_TMU_TEMP_MASK;

}
@@ -655,7 +659,6 @@ static int exynos7_tmu_initialize(struct platform_device *pdev) 
{

	struct exynos_tmu_data *data = platform_get_drvdata(pdev);

	struct thermal_zone_device *tz = data->tzd;

	struct exynos_tmu_platform_data *pdata = data->pdata;

	unsigned int status, trim_info;

	unsigned int rising_threshold = 0, falling_threshold = 0;

	int ret = 0, threshold_code, i;
@@ -672,9 +675,9 @@ static int exynos7_tmu_initialize(struct platform_device *pdev) 


	data->temp_error1 = trim_info & EXYNOS7_TMU_TEMP_MASK;

	if (!data->temp_error1 ||

	    (pdata->min_efuse_value > data->temp_error1) ||

	    (data->temp_error1 > pdata->max_efuse_value))

		data->temp_error1 = pdata->efuse_value & EXYNOS_TMU_TEMP_MASK;

	    (data->min_efuse_value > data->temp_error1) ||

	    (data->temp_error1 > data->max_efuse_value))

		data->temp_error1 = data->efuse_value & EXYNOS_TMU_TEMP_MASK;



	/* Write temperature code for rising and falling threshold */

	for (i = (of_thermal_get_ntrips(tz) - 1); i >= 0; i--) {
@@ -1136,13 +1139,6 @@ static int exynos_of_sensor_conf(struct device_node *np, 
	of_property_read_u32(np, "samsung,tmu_reference_voltage", &value);

	pdata->reference_voltage = (u8)value;



	of_property_read_u32(np, "samsung,tmu_efuse_value",

			     &pdata->efuse_value);

	of_property_read_u32(np, "samsung,tmu_min_efuse_value",

			     &pdata->min_efuse_value);

	of_property_read_u32(np, "samsung,tmu_max_efuse_value",

			     &pdata->max_efuse_value);



	of_property_read_u32(np, "samsung,tmu_cal_type", &pdata->cal_type);



	of_node_put(np);
@@ -1196,6 +1192,9 @@ static int exynos_map_dt_data(struct platform_device *pdev) 
		data->tmu_read = exynos4210_tmu_read;

		data->tmu_clear_irqs = exynos4210_tmu_clear_irqs;

		data->ntrip = 4;

		data->efuse_value = 55;

		data->min_efuse_value = 40;

		data->max_efuse_value = 100;

		break;

	case SOC_ARCH_EXYNOS3250:

	case SOC_ARCH_EXYNOS4412:
@@ -1209,6 +1208,13 @@ static int exynos_map_dt_data(struct platform_device *pdev) 
		data->tmu_set_emulation = exynos4412_tmu_set_emulation;

		data->tmu_clear_irqs = exynos4210_tmu_clear_irqs;

		data->ntrip = 4;

		data->efuse_value = 55;

		if (data->soc != SOC_ARCH_EXYNOS5420 &&

		    data->soc != SOC_ARCH_EXYNOS5420_TRIMINFO)

			data->min_efuse_value = 40;

		else

			data->min_efuse_value = 0;

		data->max_efuse_value = 100;

		break;

	case SOC_ARCH_EXYNOS5433:

		data->tmu_initialize = exynos5433_tmu_initialize;
@@ -1217,6 +1223,9 @@ static int exynos_map_dt_data(struct platform_device *pdev) 
		data->tmu_set_emulation = exynos4412_tmu_set_emulation;

		data->tmu_clear_irqs = exynos4210_tmu_clear_irqs;

		data->ntrip = 8;

		data->efuse_value = 75;

		data->min_efuse_value = 40;

		data->max_efuse_value = 150;

		break;

	case SOC_ARCH_EXYNOS5440:

		data->tmu_initialize = exynos5440_tmu_initialize;
@@ -1225,6 +1234,9 @@ static int exynos_map_dt_data(struct platform_device *pdev) 
		data->tmu_set_emulation = exynos5440_tmu_set_emulation;

		data->tmu_clear_irqs = exynos5440_tmu_clear_irqs;

		data->ntrip = 4;

		data->efuse_value = 0x5d2d;

		data->min_efuse_value = 16;

		data->max_efuse_value = 76;

		break;

	case SOC_ARCH_EXYNOS7:

		data->tmu_initialize = exynos7_tmu_initialize;
@@ -1233,6 +1245,9 @@ static int exynos_map_dt_data(struct platform_device *pdev) 
		data->tmu_set_emulation = exynos4412_tmu_set_emulation;

		data->tmu_clear_irqs = exynos4210_tmu_clear_irqs;

		data->ntrip = 8;

		data->efuse_value = 75;

		data->min_efuse_value = 15;

		data->max_efuse_value = 100;

		break;

	default:

		dev_err(&pdev->dev, "Platform not supported\n");

drivers/thermal/samsung/exynos_tmu.h

+0 −7
Original line number Diff line number Diff line
@@ -45,9 +45,6 @@ enum soc_type { 
 * @reference_voltage: reference voltage of amplifier

 *	in the positive-TC generator block

 *	0 < reference_voltage <= 31

 * @efuse_value: platform defined fuse value

 * @min_efuse_value: minimum valid trimming data

 * @max_efuse_value: maximum valid trimming data

 * @cal_type: calibration type for temperature

 *

 * This structure is required for configuration of exynos_tmu driver.
@@ -56,10 +53,6 @@ struct exynos_tmu_platform_data { 
	u8 gain;

	u8 reference_voltage;



	u32 efuse_value;

	u32 min_efuse_value;

	u32 max_efuse_value;



	u32 cal_type;

};

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