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Some MTD sublayers/drivers are implementing ->_read/write() and not ->_read/write_oob(). While for NAND devices both are usually valid, for NOR devices, using the _oob variant has no real meaning. But, as the MTD layer is supposed to hide as much as possible the flash complexity to the user, there is no reason to error out while it is just a matter of rewritting things internally. Add a fallback on mtd->_read() (resp. mtd->_write()) when the user calls mtd_read_oob() (resp. mtd_write_oob()) while mtd->_read_oob() (resp. mtd->_write_oob) is not implemented. There is already a fallback on the _oob variant if the former is used. Signed-off-by:Miquel Raynal <miquel.raynal@bootlin.com> Signed-off-by:
Boris Brezillon <boris.brezillon@bootlin.com>
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