mfd: cros_ec: Add Flash V2 commands API (3c46ae61) · Commits · 戴 / test

include/linux/mfd/cros_ec_commands.h

+147 −3

Original line number	Diff line number	Diff line
		@@ -1138,6 +1138,7 @@ struct ec_response_get_features {

		/* Get flash info */
		#define EC_CMD_FLASH_INFO 0x0010
		#define EC_VER_FLASH_INFO 2

		/**
		* struct ec_response_flash_info - Response to the flash info command.
		@@ -1164,6 +1165,15 @@ struct ec_response_flash_info {
		*/
		#define EC_FLASH_INFO_ERASE_TO_0 BIT(0)

		/*
		* Flash must be selected for read/write/erase operations to succeed. This may
		* be necessary on a chip where write/erase can be corrupted by other board
		* activity, or where the chip needs to enable some sort of programming voltage,
		* or where the read/write/erase operations require cleanly suspending other
		* chip functionality.
		*/
		#define EC_FLASH_INFO_SELECT_REQUIRED BIT(1)

		/**
		* struct ec_response_flash_info_1 - Response to the flash info v1 command.
		* @flash_size: Usable flash size in bytes.
		@@ -1186,6 +1196,12 @@ struct ec_response_flash_info {
		* gcc anonymous structs don't seem to get along with the __packed directive;
		* if they did we'd define the version 0 structure as a sub-structure of this
		* one.
		*
		* Version 2 supports flash banks of different sizes:
		* The caller specified the number of banks it has preallocated
		* (num_banks_desc)
		* The EC returns the number of banks describing the flash memory.
		* It adds banks descriptions up to num_banks_desc.
		*/
		struct ec_response_flash_info_1 {
		/* Version 0 fields; see above for description */
		@@ -1199,6 +1215,42 @@ struct ec_response_flash_info_1 {
		uint32_t flags;
		} __ec_align4;

		struct ec_params_flash_info_2 {
		/* Number of banks to describe */
		uint16_t num_banks_desc;
		/* Reserved; set 0; ignore on read */
		uint8_t reserved[2];
		} __ec_align4;

		struct ec_flash_bank {
		/* Number of sector is in this bank. */
		uint16_t count;
		/* Size in power of 2 of each sector (8 --> 256 bytes) */
		uint8_t size_exp;
		/* Minimal write size for the sectors in this bank */
		uint8_t write_size_exp;
		/* Erase size for the sectors in this bank */
		uint8_t erase_size_exp;
		/* Size for write protection, usually identical to erase size. */
		uint8_t protect_size_exp;
		/* Reserved; set 0; ignore on read */
		uint8_t reserved[2];
		};

		struct ec_response_flash_info_2 {
		/* Total flash in the EC. */
		uint32_t flash_size;
		/* Flags; see EC_FLASH_INFO_* */
		uint32_t flags;
		/* Maximum size to use to send data to write to the EC. */
		uint32_t write_ideal_size;
		/* Number of banks present in the EC. */
		uint16_t num_banks_total;
		/* Number of banks described in banks array. */
		uint16_t num_banks_desc;
		struct ec_flash_bank banks[0];
		} __ec_align4;

		/*
		* Read flash
		*
		@@ -1238,7 +1290,7 @@ struct ec_params_flash_write {
		#define EC_CMD_FLASH_ERASE 0x0013

		/**
		* struct ec_params_flash_erase - Parameters for the flash erase command.
		* struct ec_params_flash_erase - Parameters for the flash erase command, v0.
		* @offset: Byte offset to erase.
		* @size: Size to erase in bytes.
		*/
		@@ -1247,6 +1299,43 @@ struct ec_params_flash_erase {
		uint32_t size;
		} __ec_align4;

		/*
		* v1 add async erase:
		* subcommands can returns:
		* EC_RES_SUCCESS : erased (see ERASE_SECTOR_ASYNC case below).
		* EC_RES_INVALID_PARAM : offset/size are not aligned on a erase boundary.
		* EC_RES_ERROR : other errors.
		* EC_RES_BUSY : an existing erase operation is in progress.
		* EC_RES_ACCESS_DENIED: Trying to erase running image.
		*
		* When ERASE_SECTOR_ASYNC returns EC_RES_SUCCESS, the operation is just
		* properly queued. The user must call ERASE_GET_RESULT subcommand to get
		* the proper result.
		* When ERASE_GET_RESULT returns EC_RES_BUSY, the caller must wait and send
		* ERASE_GET_RESULT again to get the result of ERASE_SECTOR_ASYNC.
		* ERASE_GET_RESULT command may timeout on EC where flash access is not
		* permitted while erasing. (For instance, STM32F4).
		*/
		enum ec_flash_erase_cmd {
		FLASH_ERASE_SECTOR, /* Erase and wait for result */
		FLASH_ERASE_SECTOR_ASYNC, /* Erase and return immediately. */
		FLASH_ERASE_GET_RESULT, /* Ask for last erase result */
		};

		/**
		* struct ec_params_flash_erase_v1 - Parameters for the flash erase command, v1.
		* @cmd: One of ec_flash_erase_cmd.
		* @reserved: Pad byte; currently always contains 0.
		* @flag: No flags defined yet; set to 0.
		* @params: Same as v0 parameters.
		*/
		struct ec_params_flash_erase_v1 {
		uint8_t cmd;
		uint8_t reserved;
		uint16_t flag;
		struct ec_params_flash_erase params;
		} __ec_align4;

		/*
		* Get/set flash protection.
		*
		@@ -1282,6 +1371,15 @@ struct ec_params_flash_erase {
		#define EC_FLASH_PROTECT_ERROR_INCONSISTENT BIT(5)
		/* Entire flash code protected when the EC boots */
		#define EC_FLASH_PROTECT_ALL_AT_BOOT BIT(6)
		/* RW flash code protected when the EC boots */
		#define EC_FLASH_PROTECT_RW_AT_BOOT BIT(7)
		/* RW flash code protected now. */
		#define EC_FLASH_PROTECT_RW_NOW BIT(8)
		/* Rollback information flash region protected when the EC boots */
		#define EC_FLASH_PROTECT_ROLLBACK_AT_BOOT BIT(9)
		/* Rollback information flash region protected now */
		#define EC_FLASH_PROTECT_ROLLBACK_NOW BIT(10)


		/**
		* struct ec_params_flash_protect - Parameters for the flash protect command.
		@@ -1320,16 +1418,31 @@ struct ec_response_flash_protect {
		enum ec_flash_region {
		/* Region which holds read-only EC image */
		EC_FLASH_REGION_RO = 0,
		/* Region which holds rewritable EC image */
		EC_FLASH_REGION_RW,
		/*
		* Region which holds active RW image. 'Active' is different from
		* 'running'. Active means 'scheduled-to-run'. Since RO image always
		* scheduled to run, active/non-active applies only to RW images (for
		* the same reason 'update' applies only to RW images. It's a state of
		* an image on a flash. Running image can be RO, RW_A, RW_B but active
		* image can only be RW_A or RW_B. In recovery mode, an active RW image
		* doesn't enter 'running' state but it's still active on a flash.
		*/
		EC_FLASH_REGION_ACTIVE,
		/*
		* Region which should be write-protected in the factory (a superset of
		* EC_FLASH_REGION_RO)
		*/
		EC_FLASH_REGION_WP_RO,
		/* Region which holds updatable (non-active) RW image */
		EC_FLASH_REGION_UPDATE,
		/* Number of regions */
		EC_FLASH_REGION_COUNT,
		};
		/*
		* 'RW' is vague if there are multiple RW images; we mean the active one,
		* so the old constant is deprecated.
		*/
		#define EC_FLASH_REGION_RW EC_FLASH_REGION_ACTIVE

		/**
		* struct ec_params_flash_region_info - Parameters for the flash region info
		@@ -1364,6 +1477,37 @@ struct ec_response_vbnvcontext {
		uint8_t block[EC_VBNV_BLOCK_SIZE];
		} __ec_align4;


		/* Get SPI flash information */
		#define EC_CMD_FLASH_SPI_INFO 0x0018

		struct ec_response_flash_spi_info {
		/* JEDEC info from command 0x9F (manufacturer, memory type, size) */
		uint8_t jedec[3];

		/* Pad byte; currently always contains 0 */
		uint8_t reserved0;

		/* Manufacturer / device ID from command 0x90 */
		uint8_t mfr_dev_id[2];

		/* Status registers from command 0x05 and 0x35 */
		uint8_t sr1, sr2;
		} __ec_align1;


		/* Select flash during flash operations */
		#define EC_CMD_FLASH_SELECT 0x0019

		/**
		* struct ec_params_flash_select - Parameters for the flash select command.
		* @select: 1 to select flash, 0 to deselect flash
		*/
		struct ec_params_flash_select {
		uint8_t select;
		} __ec_align4;


		/*****************************************************************************/
		/* PWM commands */

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