3
17.
课程内容及教学日历 (如授课语言以英文为主,则课程内容介绍可以用英文;如团队教学或模块教学,教学日历须注明
主讲人)
Course Contents (in Parts/Chapters/Sections/Weeks. Please notify name of instructor for course section(s), if
this is a team teaching or module course.)
本课程除介绍量子计算基本原理、器件实现、不同器件与工艺的基本选项、硅基器件的优势,相关工艺
集成与超低温建模(4.2K 以下)等基础概念外,还包括当前前沿研究热点和未来发展趋势,并建立
CMOS 主流技术发展历程与量子计算的对比参照,和前者对后者研发突破的赋能作用的视野,为未来在
此新兴领域的进一步学习和研究打下初步基础。
Educate students to understand the basic concepts of fundamental principles of quantum computing (QC),
device realization, device/process options, advantages of Silicon based device and process approach,
associated challenges of process integration and device modelling (below 4.2K). In addition, current
research focus and future trend in the niche area will be discussed. Furthermore, the parallelism of CMOS
technology development and QC roadmap, as well as the empowering of the former to the later will be
introduced to establish insight for future study and research in QC area.
第 1-2周:量子计算基本概念介绍;
第 3-4周:量子计算的器件实现与不同选择的特点和优劣势;
第 5-6周:硅基量子计算器件的特点及其优势;
第 7-8周:硅基量子计算相关的工艺集成与超低温 CMOS 器件建模等相关领域;
第 9-10周:超低温 CMOS 器件建模;
第 11-12周:CMOS 主流技术与量子计算的参照比较与赋能作用;
第 13-14周:硅基量子计算当前研究方向与趋势;
第 15-16周:选题讨论+学期论文+口头报告;
第 17-18周:期末考试。
1
st
-2nd week: Introduction to basic concepts of Quantum Computing (QC);
3
rd
-4th week: Device realization of QC, QC device options and their associated characteristics, respectively;
5
th
-6th week: Silicon based QC devices and its pros and cons;
7
th
-8th week: related topics to Silicon based QC devices such as CMOS process integration;
9
th
-10th week: Cryogenic CMOS device modelling;
11
th
-12th week: CMOS mainstream technology vs. QC, their parallelism and empowering of the former to
the later;
13
th-
-14
th
week: Silicon based QC device current research results and future trend;
15
th
- 16
th
week: Term paper and oral presentations;
17
th
-18
th
week: Final exam.
18.
教材及其它参考资料 Textbook and Supplementary Readings