课程大纲
COURSE SYLLABUS
1.
课程代码/名称
Course Code/Title
先进半导体材料/Advanced semiconductor materials
2.
课程性质
Compulsory/Elective
专业选修课
3.
课程学分/学时
Course Credit/Hours
3 credit /48 hours
4.
授课语言
Teaching Language
English
5.
授课教师
Instructor(s)
尹龙卫 / Yin Longwei
6.
是否面向本科生开放
Open to undergraduates
or not
No
7.
先修要求
Pre-requisites
No
8.
教学目标
Course Objectives
The course is to reveal and study the micro mechanism of semiconductor and explain the macroscopic
physical phenomena that occur in semiconduc
tors from a microscopic point of view; to study the electronic
state and motion law in semiconductors; to study the statistical distribution, transport theory and related laws
of carriers in semiconductors; to learn some macroscopic physical phenomena that
occur in the transport of
carriers; and to learn some basic structures of semiconductors, including metal semiconductor junctions and
surface problems
. This course is to let students to master the nature and preparation methods of the main
semiconductor m
aterials, understand the latest development of semiconductor materials, for the work of
semiconductor material science, semiconductor device preparation to lay a foundation for the future.
9.
教学方法
Teaching Methods
1. Most of the chapters in the course will be taught in English, while some chapters will be taught in bilingual
education mode for students to better learn and master the content of the course.
2. Interactive teaching will be introduced during the course process, the students are active with
full
participation, and self-
presentation by students are invited on the relation between the course and their
research subject.
3. Latest research results and literature on the progress in semiconductor materials and devices will be
involved and reviewed.
10.
教学内容
Course Contents
Section 1 State of electrons
in semiconductors
Lecture 1 Course introduction and general review of semiconductor materials
Lecture 2 State of electrons in semiconductors
Lecture 3 Electroconductive mechanism of holes in intrinsic semiconductors,
energy band structure of silicon and germanium
Section 2 Impurities and
defect levels in
semiconductors
Lecture 4 Impurities in semiconductors
Lecture 5 Defect levels in semiconductors
Lecture 6 Statistical distribution of carriers in semiconductors, c
arrier
concentration of the intrinsic semiconductor
Lecture 7 Carrier concentration of impurity semiconductors
Lecture 8 Conductivity of semiconductors，drift mobility of carriers,
carrier
scattering
Lecture 9 Conductivity of semiconductors, resistivity and its relation to
impurity concentration and temperature
Lecture 10 Effects under a strong electric field, thermal carriers
Section 3 Non-equilibrium
carriers and p-n junction
Lecture 11 Non-equilibrium carriers, injection and recombination of non-
equilibrium carriers
Lecture 12 Lifetimes of non-equilibrium carriers, quasi-Fermi level,
Lecture 13 Non-equilibrium carriers, composite theory, trap effect,
Einstein
relation of the drift motion of the carrier
Lecture 14 p-n junction, h
eterojunction and its band diagram, carrier transport
mechanism of heterojunction
Section 4 Metal and
semiconductor contacts
Lecture 15 Metal and semiconductor contacts, metal and semiconductor
contact and its energy band map, rectifier theory of metal-
semiconductor
contact, Ohmic contact
Section 5 Semiconductor
surface and MIS structure
Lecture 16 Surface state, surface electric field effect, capacitive voltage
characteristics of the MIS structure, property of the silicon-silica system
Section 6 Photoelectric
properties, photoelectricity
and luminescence of
semiconductors
Lecture 17 Optical absorption and photo conductivity of semiconductors,
photovolt effect of semiconductors, Semiconductor luminescence and laser
Section 7 Thermoelectric
properties of semiconductors
Lecture 18 Thermo-electric properties of Semiconductor, application of
thermoelectric effect
Section 8 Semiconductor
magnetic and piezoresistive
effects
Lecture 19 Hall effect, magnetoresistivity, photomagnetoelectric effect,
electroresistive effect
Section 9 Semiconductor
materials
Lecture 20 Semiconductor materials, technical requirements for
semiconductor materials,
Lecture 21 Preparation of semiconductor materials
Section 10 Semiconductor
devices
Lecture 22 Semiconductor diode
Lecture 23 Semiconductor triode
Lecture 24 Field-effect transistor
11.
课程考核
Course Assessment
Class participation / Quiz: 15%
Homework: 25%
Midterm: 25%
Final: 35%
12.
教材及其它参考资料
Textbook and Supplementary Readings
1.
《半导体物理学》
(
第六版
)
，刘恩科等编著，电子工业出版社。
2.
《半导体物理与器件》（第三版），
Donald A.Neamen
著，电子工业出版社。
