Lecture 1 (3 Credit hours): Introduction to semiconducting materials, basic properties of
semiconductors
Lecture 2 (3 Credit hours): Transport phenomena in semiconductors – drifting, diffusion,
recombination and generation
Lecture 3 (3 Credit hours): Transport phenomena in semiconductors – continuity equations
Lecture 4 (3 Credit hours): Diodes
Lecture 5 (3 Credit hours): Bipolar transistors
Lecture 6 (3 Credit hours): Metal-oxide-semiconductor capacitors
Lecture 7 (3 Credit hours): MOSFET devices
Lecture 8 (3 Credit hours): Modern MOSFET devices
Lecture 9 (3 Credit hours): Solid-state sensors
Lecture 10 (3 Credit hours): Thin-film transistors and liquid crystal display
Lecture 11 (3 Credit hours): Crystal growth and oxidation
Lecture 12 (3 Credit hours): Doping: diffusion and ion implantation
Lecture 13 (3 Credit hours): Lithographic techniques
Lecture 14 (3 Credit hours): Thin-film deposition: CVD and PVD
Lecture 15 (3 Credit hours): Etching: wet and dry
Lecture 16 (3 Credit hours): Process integration
Textbook
“Semiconductor Devices: Physics and Technology”, 3rd edition, Simon M. Sze and Ming-Kwei Lee,
Wiley, 2012.
References
1. “Devices for Integrated Circuits: Silicon and III-V Compound Semiconductors”, H. Craig
Casey, Jr., Wiley, 1999.
2. “Silicon VLSI Technology: Fundamentals, Practice, and Modelling”, James D. Plummer, Michael
Deal, and Peter D. Griffin, Prentice Hall, 2001.
Lecture notes will be provided.