An ability to analyse the characteristics and performance of semiconductor devices
An ability to apply simulation tools to modulate the output of semiconductor devices
课程内容及教学日历 (如授课语言以英文为主,则课程内容介绍可以用英文;如团队教学或模块教学,教学日历须注明
主讲人)
Course Contents (in Parts/Chapters/Sections/Weeks. Please notify name of instructor for course section(s), if
this is a team teaching or module course.)
Section 1: Overview of semiconductor industry and trend (Week 1)
Section 2: Fundamentals of semiconductors I (crystal structure, energy band, intrinsic semiconductor) (Week 1)
Fundamentals of semiconductors II (doping, Fermi-Dirac Function, semiconductor in equilibrium) (Week 2)
Section 3: Charge Carrier Transport (Week 3)
Section 4: Non-equilibrium excess carriers (Week 4)
Section 5: P-N Junction (Week 5)
P-N Junction Diode (Week 6)
P-N Junction Capacitance (Week 7)
Section 6: Metal-Semiconductor Contact (Week 8)
Section 7:Solar cell devices (Week 9-10)
Section 8: Mos Capacitor characteristics (Week 11-12)
Section 9:MOSFET devices (Week 13-14)
Section 10: GaN device structure and characteristics (Week 15-16)
教材及其它参考资料 Textbook and Supplementary Readings
Semiconductor Physics and Devices Basic Principles, 4
th
Edition, Donald A. Neamen
Semiconductor Device Fundamentals, Robert F. Pierret
Physics of Semiconductor Devices, 3
rd
Edition, S. M. Sze, Kwok K. Ng
Gallium Nitride Power Devices, Hongyu Yu and Tianli Duan
占考试总成绩百分比
% of final
score